Behavioral Modeling of GaN FETs: A Load-Line Approach

Author

Raffo, Antonio ; Bosi, Gianni ; Vadala, Valeria ; Vannini, Giorgio

Author_Institution

Dept. of Eng., Univ. of Ferrara, Ferrara, Italy

Volume

62

Issue

1

fYear

2014

fDate

Jan. 2014

Firstpage

73

Lastpage

82

Abstract

In this paper, a new model formulation is presented that correctly accounts for low-frequency dispersion (i.e., trapping and thermal phenomena) affecting field-effect transistors (FETs). In particular, for the first time a behavioral description is applied only to the intrinsic current generator, enabling the correct measurement-based evaluation of the intrinsic device operation. The model, which is by construction technology independent, has been extensively validated considering a GaN FET. This choice is justified by the large interest around this technology and by the presence of dispersion effects that must be accurately accounted for.

Keywords

III-V semiconductors; field effect transistors; gallium compounds; semiconductor device models; wide band gap semiconductors; GaN; GaN FET; behavioral modeling; field-effect transistors; intrinsic current generator; intrinsic device operation; load-line approach; low-frequency dispersion; thermal phenomena; trapping phenomena; Charge carrier processes; Gallium nitride; Harmonic analysis; Load modeling; Mathematical model; Solid modeling; Transistors; Field-effect transistors (FETs); GaN transistors; microwave amplifiers; nonlinear circuits; nonlinear distortion; semiconductor device modeling;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2013.2291710

Filename

6679302