Title :
Ultra fast detection based on SiGe thin layers
Author :
Lembrikov, B.I. ; Ben-Ezra, Y.
Author_Institution :
Dept. of Electr. Eng., Holon Inst. of Technol., Holon, Israel
Abstract :
We solved exactly the continuity equations for the photo-carrier concentration in a thin SiGe/Si layer. The analytical expressions in a closed form are obtained for the concentration and photocurrent. It is shown that thin SiGe/Si layers may be used as high speed detecting elements in the integrated Si photonics systems.
Keywords :
Ge-Si alloys; integrated optics; photoconductivity; photoemission; continuity equation; integrated Si photonics system; photo-carrier concentration; photocurrent; thin SiGe/Si layer; ultra fast detection; Germanium silicon alloys; High speed optical techniques; Nonlinear optical devices; Nonlinear optics; Optical modulation; Optical receivers; Optical transmitters; Photonics; Silicon germanium; Stimulated emission; Si photonics; SiGe receivers; high speed detector; photoconductivity;
Conference_Titel :
Transparent Optical Networks (ICTON), 2010 12th International Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-7799-9
Electronic_ISBN :
978-1-4244-7797-5
DOI :
10.1109/ICTON.2010.5549024
