Negative Characteristic Temperature of Long Wavelength InAs/AlGaInAs Quantum Dot Laser Grown on InP Substrates

Author

Alghoraibi, I. ; Rohel, T. ; Piron, R. ; Bertru, N. ; Paranthoen, C. ; Elias, G. ; Nakkar, A. ; Folliot, H. ; Corre, A. Le ; Loualiche, S.

Author_Institution

LENS-FOTON, Rennes

fYear

2008

Firstpage

1

Lastpage

5

Abstract

InAs quantum dot lasers grown on (311)B InP substrates with AlGalnAs barriers have been fabricated and studied. A large decrease of the threshold current with temperature was observed from 110 to 140 K. In the same temperature range, electroluminescence spectra showed a shape change, an energy shift with temperature, which can not be fitted with a Varshni law, and a large decrease of the laser linewidth. These results can be related to a delayed thermalization of carriers within quantum dot ensemble.

Keywords

electroluminescent devices; quantum dot lasers; InP substrates; Varshni law; electroluminescence spectra; quantum dot laser; Delay; Electroluminescence; Indium phosphide; Laser stability; Molecular beam epitaxial growth; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Substrates; Temperature distribution; AlGaInAs (Q1.2); Electroluminescence (EL); InAs Quantum dots (QDs); InP; Lightwave communication; Molecular beam epitaxy (MBE); Negative characteristic temperateure (T0); Quantum dots laser; Semiconductor laser;

fLanguage

English

Publisher

ieee

Conference_Titel

Information and Communication Technologies: From Theory to Applications, 2008. ICTTA 2008. 3rd International Conference on

Conference_Location

Damascus

Print_ISBN

978-1-4244-1751-3

Electronic_ISBN

978-1-4244-1752-0

Type

conf

DOI

10.1109/ICTTA.2008.4530148

Filename

4530148