Title :
Mathematical modeling of growth conditions and interpretation of phase diagram for InxGa1−xN epitaxial layer
Author :
Hasan, Md Soyaeb ; Saha, A.K. ; Islam, Md Rafiqul
Author_Institution :
Dept. of Electr. & Electron. Eng., KUET, Khulna, Bangladesh
Abstract :
It is imperative to determine the dependence of the quality and characteristics of the epitaxial film on different growth parameters. A mathematical model has been developed showing the effect of different growth parameters e.g. temperature, TMI and TEG flow rate, molar ratio on epitaxial film. This model is considered for InGaN film on GaN template with an Indium mole fraction up to 0.4 by Metal Organic Vapor Phase Epitaxy (MOVPE). The results obtained from this model has been compared and fitted with experimentally obtained data through XRD, RSM, PL, SEM etc. Finally, a phase diagram has been proposed to interpret the phase separation and Indium content evolution under the influence of growth temperature and precursor gas flow.
Keywords :
III-V semiconductors; X-ray diffraction; gallium compounds; indium compounds; phase diagrams; phase separation; photoluminescence; scanning electron microscopy; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; GaN template; InxGa1-xN; MOVPE; RSM; SEM; TEG flow rate; TMI flow rate; XRD; epitaxial film characteristics; epitaxial layers; film growth parameters; growth temperature; indium mole fraction; mathematical modeling; metal organic vapor phase epitaxy; phase diagram interpretation; phase separation; precursor gas flow; Epitaxial growth; Epitaxial layers; Gallium nitride; Indium; Mathematical model; Semiconductor process modeling; InGaN; MOVPE; Mathematical Modeling; Phase Diagram; Phase separation;
Conference_Titel :
Computing, Electrical and Electronics Engineering (ICCEEE), 2013 International Conference on
Conference_Location :
Khartoum
Print_ISBN :
978-1-4673-6231-3
DOI :
10.1109/ICCEEE.2013.6633986
