Mathematical modeling of growth conditions and interpretation of phase diagram for InxGa1−xN epitaxial layer

It is imperative to determine the dependence of the quality and characteristics of the epitaxial film on different growth parameters. A mathematical model has been developed showing the effect of different growth parameters e.g. temperature, TMI and TEG flow rate, molar ratio on epitaxial film. This model is considered for InGaN film on GaN template with an Indium mole fraction up to 0.4 by Metal Organic Vapor Phase Epitaxy (MOVPE). The results obtained from this model has been compared and fitted with experimentally obtained data through XRD, RSM, PL, SEM etc. Finally, a phase diagram has been proposed to interpret the phase separation and Indium content evolution under the influence of growth temperature and precursor gas flow.