• DocumentCode
    1579696
  • Title

    Reduce scrap: control oxide loss in SC1

  • Author

    Maines, Heather ; Rathmell, Mark ; Veldhuis, Lydia

  • Author_Institution
    Nat. Semicond. Corp., South Portland, ME, USA
  • fYear
    2002
  • fDate
    6/24/1905 12:00:00 AM
  • Firstpage
    184
  • Lastpage
    186
  • Abstract
    In this study, we characterize thermal silicon dioxide, plasma enhanced CVD tetraorthosilicate oxide (PECVD TEOS) and phosphorous doped silicate glass (PSG) etch rates in SC1 as a function of temperature and concentration. We also measure the effect of implant screen oxide loss in SC1 on transistor voltage turn on and elucidate ways to reduce scrap due to oxide loss in SC1.
  • Keywords
    etching; insulating thin films; phosphosilicate glasses; plasma CVD coatings; silicon compounds; P2O5-SiO2; PSG; SC1 etch rate; SiO2; implant screen oxide loss; phosphorous doped silicate glass; plasma enhanced CVD tetraorthosilicate oxide; scrap; thermal silicon dioxide; transistor voltage turn-on; Etching; Glass; Implants; Loss measurement; Plasma applications; Plasma displays; Plasma measurements; Plasma temperature; Silicon compounds; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Manufacturing 2002 IEEE/SEMI Conference and Workshop
  • Print_ISBN
    0-7803-7158-5
  • Type

    conf

  • DOI
    10.1109/ASMC.2002.1001600
  • Filename
    1001600
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1579696