Title :
Reduce scrap: control oxide loss in SC1
Author :
Maines, Heather ; Rathmell, Mark ; Veldhuis, Lydia
Author_Institution :
Nat. Semicond. Corp., South Portland, ME, USA
fDate :
6/24/1905 12:00:00 AM
Abstract :
In this study, we characterize thermal silicon dioxide, plasma enhanced CVD tetraorthosilicate oxide (PECVD TEOS) and phosphorous doped silicate glass (PSG) etch rates in SC1 as a function of temperature and concentration. We also measure the effect of implant screen oxide loss in SC1 on transistor voltage turn on and elucidate ways to reduce scrap due to oxide loss in SC1.
Keywords :
etching; insulating thin films; phosphosilicate glasses; plasma CVD coatings; silicon compounds; P2O5-SiO2; PSG; SC1 etch rate; SiO2; implant screen oxide loss; phosphorous doped silicate glass; plasma enhanced CVD tetraorthosilicate oxide; scrap; thermal silicon dioxide; transistor voltage turn-on; Etching; Glass; Implants; Loss measurement; Plasma applications; Plasma displays; Plasma measurements; Plasma temperature; Silicon compounds; Voltage;
Conference_Titel :
Advanced Semiconductor Manufacturing 2002 IEEE/SEMI Conference and Workshop
Print_ISBN :
0-7803-7158-5
DOI :
10.1109/ASMC.2002.1001600
