Title :
Programmable current mode Hebbian learning neural network using programmable metallization cell
Author :
Swaroop, B. ; West, W.C. ; Martinez, G. ; Kozicki, M.N. ; Akers, L.A.
Author_Institution :
Center for Solid State Electron. Res., Arizona State Univ., Tempe, AZ, USA
Abstract :
The design and performance of a Hebbian learning based neural network is presented in this work. In situ analog learning was employed, thus computing the synaptic weight changes continuously during the normal operation of the artificial neural network (ANN). The complexity of a synapse is minimized by using a novel device called the Programmable Metallization Cell (PMC). Simulations with circuits with three PMCs per synapse showed that appropriate learning behaviour was obtained at the synaptic level
Keywords :
CMOS analogue integrated circuits; Hebbian learning; VLSI; analogue processing circuits; integrated circuit metallisation; neural chips; ANN; Hebbian learning neural network; artificial neural network; in situ analog learning; programmable current mode neural network; programmable metallization cell; synaptic weight; Artificial neural networks; Cathodes; Circuits; Glass; Hebbian theory; Metallization; Neural networks; Neurons; Silver; Voltage;
Conference_Titel :
Circuits and Systems, 1998. ISCAS '98. Proceedings of the 1998 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-4455-3
DOI :
10.1109/ISCAS.1998.703888