Title :
1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401)
Abstract :
The following topics are dealt with: HBTs for microwave and optoelectronic devices; high-speed MESFETs and HEMTs; electron devices and circuits modelling; microwave semiconductor devices; reliability; microwave photonic devices; noise characterisation of electron devices; nonlinear behaviour; and new materials
Keywords :
Schottky gate field effect transistors; circuit CAD; heterojunction bipolar transistors; high electron mobility transistors; integrated optoelectronics; microwave circuits; nonlinear network analysis; optoelectronic devices; semiconductor device models; semiconductor device noise; semiconductor device reliability; wide band gap semiconductors; HBT; HEMT; electron devices; high-speed MESFET; materials; microwave devices; microwave photonic devices; microwave semiconductor device; noise characterisation; nonlinear behaviou; optoelectronic devices; reliability;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1999. EDMO. 1999 Symposium on
Conference_Location :
London, UK
Print_ISBN :
0-7803-5298-X
DOI :
10.1109/EDMO.1999.821074
