Title :
Analysis and modeling of LNA circuit reliability
Author :
Xiao, Enjun ; Zhu, Peiqing ; Yuan, J.S. ; Yu, Chuanzhao
Author_Institution :
Dept. of Electr. Eng., Texas Univ., Arlington, TX, USA
Abstract :
This paper systematically investigates the hot carrier (HC) and soft breakdown (SBD) effects on different low noise amplifier (LNA) circuit configurations. After the MOSFET device RF parameter degradations due to HC and SBD effects are experimentally evaluated, the HC and SBD induced performance degradations of three LNA configurations are evaluated for 0.16 μm CMOS technology. The applications include Bluetooth and wireless LAN systems. The analytical equations for noise figure are derived, and the degradation models are also obtained. This work can help LNA designers to design more reliable LNA circuits.
Keywords :
Bluetooth; CMOS analogue integrated circuits; MOSFET; hot carriers; integrated circuit modelling; integrated circuit noise; integrated circuit reliability; radiofrequency amplifiers; semiconductor device breakdown; wireless LAN; 0.16 micron; Bluetooth; CMOS technology; LNA circuit reliability; MOSFET device RF parameter degradations; degradation models; hot carrier effects; low noise amplifier; noise figure; oxide breakdown; soft breakdown effects; wireless LAN; Bluetooth; CMOS technology; Circuit noise; Degradation; Electric breakdown; Hot carriers; Low-noise amplifiers; MOSFET circuits; Radio frequency; Radiofrequency amplifiers;
Conference_Titel :
Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE
Print_ISBN :
0-7803-8983-2
DOI :
10.1109/RFIC.2005.1489499
