Analysis and modeling of LNA circuit reliability

Author

Xiao, Enjun ; Zhu, Peiqing ; Yuan, J.S. ; Yu, Chuanzhao

Author_Institution

Dept. of Electr. Eng., Texas Univ., Arlington, TX, USA

fYear

2005

Firstpage

69

Lastpage

72

Abstract

This paper systematically investigates the hot carrier (HC) and soft breakdown (SBD) effects on different low noise amplifier (LNA) circuit configurations. After the MOSFET device RF parameter degradations due to HC and SBD effects are experimentally evaluated, the HC and SBD induced performance degradations of three LNA configurations are evaluated for 0.16 μm CMOS technology. The applications include Bluetooth and wireless LAN systems. The analytical equations for noise figure are derived, and the degradation models are also obtained. This work can help LNA designers to design more reliable LNA circuits.

Keywords

Bluetooth; CMOS analogue integrated circuits; MOSFET; hot carriers; integrated circuit modelling; integrated circuit noise; integrated circuit reliability; radiofrequency amplifiers; semiconductor device breakdown; wireless LAN; 0.16 micron; Bluetooth; CMOS technology; LNA circuit reliability; MOSFET device RF parameter degradations; degradation models; hot carrier effects; low noise amplifier; noise figure; oxide breakdown; soft breakdown effects; wireless LAN; Bluetooth; CMOS technology; Circuit noise; Degradation; Electric breakdown; Hot carriers; Low-noise amplifiers; MOSFET circuits; Radio frequency; Radiofrequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-8983-2

Type

conf

DOI

10.1109/RFIC.2005.1489499

Filename

1489499