Title :
Cleaning of high aspect ratio submicron trenches
Author :
Lin, Hong ; Busnaina, Ahmed A. ; Suni, Ian I.
Author_Institution :
Microelectron. Div., IBM Corp., Hopewell Junction, NY, USA
fDate :
6/24/1905 12:00:00 AM
Abstract :
High aspect ratio submicron trench cleaning is of seriously concern in semiconductor manufacturing. Megasonic cleaning is known as one of the most effective techniques in blanket wafer cleaning. The authors have studied megasonic rinsing and cleaning processes for blanket wafers and provided both experimental and modeling results. Although megasonic cleaning is currently used in patterned wafer cleaning, the mechanism of the process is not well understood. In our previous research , simulation of pulsating flow passing a series of rectangular cavities was verified and showed excellent agreement with the numerical and experimental results of Perkins. Pulsating flow rinse shows a significant advantage in patterned wafer cleaning because the vortex oscillating mechanism enhances the mixing. In this paper, the removal of contaminants from high aspect-ratio submicron trenches using high frequency pulsating flow (megasonic rinse) is studied using physical modeling.
Keywords :
flow simulation; pulsatile flow; semiconductor process modelling; surface contamination; ultrasonic cleaning; blanket wafer cleaning; contaminant removal; high aspect ratio submicron trench cleaning; high frequency pulsating flow; megasonic cleaning; megasonic rinsing; patterned wafer cleaning; physical modeling; pulsating flow rinse; pulsating flow simulation; rectangular cavities; semiconductor manufacturing; vortex oscillating mechanism; Boundary conditions; Cleaning; Computational fluid dynamics; Frequency; Geometry; Navier-Stokes equations; Numerical models; Semiconductor device manufacture; Semiconductor device modeling; Surface contamination;
Conference_Titel :
Advanced Semiconductor Manufacturing 2002 IEEE/SEMI Conference and Workshop
Print_ISBN :
0-7803-7158-5
DOI :
10.1109/ASMC.2002.1001623