A model for outgassing of organic contamination from wafer carrier boxes

Author

Ho, Yu-Min ; Parks, H.G. ; Vermeire, B.

Author_Institution

Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA

fYear

2002

fDate

6/24/1905 12:00:00 AM

Firstpage

314

Lastpage

318

Abstract

A thermal desorption apparatus has been developed to study the adsorption and desorption of organic contaminants on silicon wafers due to outgassing from plastic wafer carrier boxes. This paper describes a complete outgassing model for organic contamination based on characterization of the outgassing of organic contamination from polypropylene carrier boxes using Butylated Hydroxytoluene (BHT) as a model compound. The model was developed from experimental data for a limited set of time/temperature conditions. Verification of the model is provided by its goodness of fit over an extended set of experimental data.

Keywords

CMOS integrated circuits; integrated circuit manufacture; organic compounds; outgassing; semiconductor process modelling; surface contamination; thermally stimulated desorption; CMOS VLSI devices; butylated hydroxytoluene; diffusion model; model verification; organic contaminant adsorption; organic contamination; outgassing model; plastic wafer carrier boxes; polypropylene carrier boxes; silicon wafers; thermal desorption apparatus; time/temperature conditions; wafer carrier boxes; Atmospheric measurements; CMOS technology; Fingers; Mass spectroscopy; Organic materials; Plastics; Semiconductor device modeling; Silicon; Surface contamination; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing 2002 IEEE/SEMI Conference and Workshop

Print_ISBN

0-7803-7158-5

Type

conf

DOI

10.1109/ASMC.2002.1001625

Filename

1001625