DocumentCode
1580413
Title
Characterization of copper voids in dual damascene processes
Author
Guldi, Richard L. ; Shaw, Judy B. ; Ritchison, Jeffrey ; Oestreich, Steve ; Davis, Kara ; Fiordalice, Robert
Author_Institution
Texas Instrum. Inc., Dallas, TX, USA
fYear
2002
fDate
6/24/1905 12:00:00 AM
Firstpage
351
Lastpage
355
Abstract
The introduction of copper dual Damascene processing into integrated circuits has brought about a host of new defectivity issues, especially those related to pitting and voiding. These defects must be understood and eliminated to achieve competitive manufacturing yields and assure device reliability.
Keywords
copper; electron beam applications; inspection; integrated circuit metallisation; voids (solid); Cu; copper dual damascene processing; defect source partitioning; defectivity; device reliability; electron beam inspection; integrated circuit; manufacturing yield; pitting; voiding; Annealing; Copper; Inspection; Instruments; Integrated circuit manufacture; Integrated circuit reliability; Integrated circuit yield; Manufacturing processes; Optical detectors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing 2002 IEEE/SEMI Conference and Workshop
Print_ISBN
0-7803-7158-5
Type
conf
DOI
10.1109/ASMC.2002.1001632
Filename
1001632
Link To Document