Title :
Intermetal dielectric deposition by plasma enhanced chemical vapor deposition
Author :
Olmer, L.J. ; Lory, E.R.
Author_Institution :
AT&T Bell Lab. Eng. Res. Center, Princeton, NJ, USA
Abstract :
Plasma-enhanced deposition of a high-quality dielectric film for use as an intermetal dielectric in multilevel metal devices was demonstrated. Low-stress silicon dioxide films up to 2 mu m thick were deposited using tetraethylorthosilicate as a precursor. The films exhibit excellent step coverage, and the relatively low deposition temperature avoids hillock formation. Analysis of the films shows physical and electrical characteristics suitable for device applications.<>
Keywords :
dielectric thin films; plasma CVD; silicon compounds; 2 micron; SiO/sub 2/; device applications; high-quality dielectric film; hillock formation; intermetal dielectric; multilevel metal devices; plasma enhanced chemical vapor deposition; step coverage; tetraethylorthosilicate; Aluminum; Chemical vapor deposition; Delay; Dielectric films; Metallization; Plasma chemistry; Plasma devices; Plasma temperature; Silicon compounds; Stress;
Conference_Titel :
Electronic Manufacturing Technology Symposium, 1988, Design-to-Manufacturing Transfer Cycle. Fifth IEEE/CHMT International
Conference_Location :
Lake Buena Vista, FL, USA
DOI :
10.1109/EMTS.1988.16157
