Title :
An ultra low power low noise amplifier for 3.1∼10.6 GHz UWB receivers
Author :
Jingru Sun ; Chunhua Wang ; Kui Fu
Author_Institution :
Coll. of Inf. Sci. & Eng., Hunan Univ., Changsha, China
Abstract :
An ultra-low-power low noise amplifier (LNA) for ultra-wideband (UWB) receivers is proposed in this paper. The first stage of the amplifier employs a resistive shunt feedback topology and a parallel LC load to provide wideband input impedance matching. The current-reuse configuration is used to ensure the first and second amplifier transistors share the same bias current. By applying forward body bias technique, the proposed circuit can operate at a reduced supply voltage. The UWB LNA was fabricated using a chartered 0.18μm CMOS process. Operating in 3.1~10.6GHz, the maximum power gain is 11.4~12.2dB, the input and output reflection coefficient are lower than -10dB, and the noise figure (NF) is lower than 4.3dB, while the power consumption is only 1.9mW from a 0.8V supply voltage.
Keywords :
CMOS integrated circuits; impedance matching; low noise amplifiers; microwave amplifiers; microwave receivers; radio receivers; ultra wideband communication; CMOS process; UWB receivers; amplifier transistors; current-reuse configuration; forward body bias technique; input reflection coefficient; maximum power gain; noise figure; output reflection coefficient; parallel LC load; power 1.9 mW; power consumption; resistive shunt feedback topology; size 0.18 mum; ultra-wideband receivers; ultralow power LNA; ultralow power low noise amplifier; voltage 0.8 V; wideband input impedance matching; CMOS integrated circuits; Impedance matching; Noise measurement; Power demand; Radio frequency; Receivers; Wireless communication; LNA; UWB; current-reuse; feedback; forward body bias;
Conference_Titel :
Global High Tech Congress on Electronics (GHTCE), 2013 IEEE
Conference_Location :
Shenzhen
DOI :
10.1109/GHTCE.2013.6767256
