A Tunable Active MMIC Time Delay for Communication Systems in SiGe BiCMOS Technology

Author

Langari, P. ; Pourakbar, Mohammadreza ; Dousti, Massoud ; Temcamani, Farid ; Dracressoniere, B.

Author_Institution

Branch of Northern Khorasan, Jahad Daneshgahi, Tehran

fYear

2008

Firstpage

1

Lastpage

5

Abstract

This paper describes a monolithic tunable active time delay with variable gain, designed using monolithic-microwave integrated-circuit (MMIC) technology, targeting in 3.5-4.5 GHz range with a low power consumption of 9.4 mW. It is impossible to realize such great delays with ideal transmission line in MMIC, because of the length required for the line. In this paper We present analytical and computer-simulated results using 0.35 mum SiGe BiCMOS process for a tunable active time delay in 3.5-4.5 GHz range. It works as a pure time delay over 800 MHz frequency band.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MMIC; delays; BiCMOS technology; MMIC; communication systems; monolithic tunable active time delay; Admittance; BiCMOS integrated circuits; Capacitors; Circuit topology; Delay effects; Frequency; Germanium silicon alloys; MMICs; Silicon germanium; Tunable circuits and devices; All-pass cell; SiGe BiCMOS; Wilson circuit; monolithic microwave integrated circuit (MMIC); time delay;

fLanguage

English

Publisher

ieee

Conference_Titel

Information and Communication Technologies: From Theory to Applications, 2008. ICTTA 2008. 3rd International Conference on

Conference_Location

Damascus

Print_ISBN

978-1-4244-1751-3

Electronic_ISBN

978-1-4244-1752-0

Type

conf

DOI

10.1109/ICTTA.2008.4530255

Filename

4530255