A Fully Differential Low Phase Noise and Extra Linear VCO Design in SiGe BiCMOS Technology

Author

Seyedi, M.H. ; Dousti, M. ; Temcamani, F. ; Gautierassoud, J.L.

Author_Institution

Dept. of Electron., Azad Univ., Tehran

fYear

2008

Firstpage

1

Lastpage

5

Abstract

Fully differential voltage-controlled oscillator (VCO) design with a low phase noise and extra linear VCO gain (Kvco) for 5-GHz wireless applications in 0.35-mum SiGe (Silicon Germanium) BiCMOS technology is discussed in this paper. The phase noise level is -120.976 dBc/Hz at 1 MHz offset at an oscillation frequency of 5.4 GHz. The Kvco changes from 214 MHz/V to 271 MHz/V. The tunability of the structure covers 786 MHz, from 4.642 GHz up to 5.428 GHz. Considering a current consumption of 3.13 mA, with 3.0 V voltage supply.

Keywords

BiCMOS integrated circuits; microwave oscillators; phase noise; submillimetre wave oscillators; voltage-controlled oscillators; BiCMOS technology; SiGe; current 3.13 mA; extra linear VCO design; frequency 4.642 GHz to 5.428 GHz; frequency 5 GHz; frequency 786 MHz; fully differential VCO; low phase noise level; size 0.35 mum; voltage 3.0 V; voltage-controlled oscillator; wireless application; BiCMOS integrated circuits; Frequency; Germanium silicon alloys; MOS capacitors; P-n junctions; Phase noise; RLC circuits; Silicon germanium; Varactors; Voltage-controlled oscillators; Kvco; SiGe BiCMOS technology; VCO gain; junction varactor; voltage-controlled oscillator(VCO);

fLanguage

English

Publisher

ieee

Conference_Titel

Information and Communication Technologies: From Theory to Applications, 2008. ICTTA 2008. 3rd International Conference on

Conference_Location

Damascus

Print_ISBN

978-1-4244-1751-3

Electronic_ISBN

978-1-4244-1752-0

Type

conf

DOI

10.1109/ICTTA.2008.4530257

Filename

4530257