DocumentCode :
1582
Title :
Simulation Study of Resistor Networks Applied to an Array of 256 SiPMs
Author :
Gonzalez, A.J. ; Moreno, Marco ; Barbera, J. ; Conde, P. ; Hernandez, L. ; Moliner, L. ; Monzo, Jose M. ; Orero, A. ; Peiro, Alvaro ; Polo, Ricardo ; Rodriguez-Alvarez, M.J. ; Ros, Alberto ; Sanchez, F. ; Soriano, A. ; Vidal, L.F. ; Benlloch, J.M.
Author_Institution :
Inst. for Instrum. in Mol. Imaging, Ciudad Politcnica de la Innovacion, Valencia, Spain
Volume :
60
Issue :
2
fYear :
2013
fDate :
Apr-13
Firstpage :
592
Lastpage :
598
Abstract :
In this work we describe a procedure to reduce the number of signals detected by an array of 256 Silicon Photomultipliers (SiPMs) using a resistor network to divide the signal charge into few readout channels. Several configurations were modeled, and the pulsed signal at the readout contacts were simulated. These simulation results were experimentally tested on a specifically designed and manufactured set of printed circuit boards. Three network configurations were modeled. The modeling provided encouraging results for all three configurations. The measurements on the prototypes constructed for this study, however, provided useful position-sensitivity for only one of the network configurations. The lack of input signal amplification into the networks, the SiPM dark current, as well as the complexity of an eight layers board with parasitic capacitances, could have caused the degradation of resolving the impact photon position. This is hard to overcome with external printed circuit boards and components.
Keywords :
nuclear electronics; photomultipliers; position sensitive particle detectors; printed circuits; readout electronics; silicon radiation detectors; SiPM dark current; external printed circuit boards; impact photon position; input signal amplification; network configurations; parasitic capacitances; position-sensitivity; pulsed signal; readout channels; readout contacts; resistor network; resistor networks; signal charge; silicon photomultipliers; Arrays; Crystals; Detectors; Integrated circuit modeling; Photonics; Resistance; Resistors; Array signal processing; gamma ray detectors; positron emission tomography; semiconductor device modeling;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2012.2226051
Filename :
6407477
Link To Document :
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