Title :
Gate drive for high speed, high power IGBTs
Author :
Nguyen, M.N. ; Cassel, R.L. ; deLamare, J.E. ; Pappas, G.C.
Author_Institution :
Linear Accel. Center, Stanford Univ., CA, USA
Abstract :
A new gate drive for high-voltage, high-power IGBT has been developed for the SLAC NLC (Next Linear Collider) Solid State Induction Modulator. This paper describes the design and implementation of a driver that allows an IGBT module rated at 800 A/3300 V to switch up to 3000 A at 2200 V in 3 /spl mu/s with a rate of current rise of more than 10000 A//spl mu/s, while still being short circuit protected. Issues regarding fast turn on, high de-saturation voltage detection, and low short circuit peak current are presented. A novel approach is also used to counter the effect of unequal current sharing between parallel chips inside most high-power IGBT modules. It effectively reduces the collector-emitter peak currents and thus protects the IGBT from being destroyed during soft short circuit conditions at high di/dt.
Keywords :
driver circuits; insulated gate bipolar transistors; modules; overcurrent protection; power semiconductor switches; pulsed power switches; 2200 V; 3 mus; 3000 A; 3300 V; 800 A; HV high-power IGBTs; Next Linear Collider; SLAC NLC solid state induction modulator; driver; fast turn on; gate drive; high desaturation voltage detection; high-power IGBT modules; high-voltage IGBTs; low short circuit peak current; parallel chips; short circuit protection; unequal current sharing; Boosting; Driver circuits; Insulated gate bipolar transistors; Protection; Pulse modulation; Pulse transformers; Solid state circuits; Switches; Switching circuits; Voltage;
Conference_Titel :
Pulsed Power Plasma Science, 2001. PPPS-2001. Digest of Technical Papers
Conference_Location :
Las Vegas, NV, USA
Print_ISBN :
0-7803-7120-8
DOI :
10.1109/PPPS.2001.1001721
