Title :
A 1.2-V Single-Stage, SiGe BiCMOS Low-Noise Amplifier at 5.8GHz for Wireless Applications
Author :
Pourakbar, M. ; Langari, P. ; Dousti, M. ; Temcamani, F. ; Dracressoniere, B. ; Gautier, J.L.
Abstract :
This paper describes a low voltage low noise amplifier (LNA), designed using 0.35¿m SiGe BiCMOS process, targeting a center frequency of 5.8GHz with a voltage supply 1.2V. A power gain of 12.1dB at 5.8GHz has been achieved with a low power consumption of 3.8mW, including all biasing circuitry. The overall noise figure of the LNA is 3dB with both input and output impedance matched to 50¿.
Keywords :
BiCMOS integrated circuits; Circuit noise; Energy consumption; Frequency; Germanium silicon alloys; Impedance; Low voltage; Low-noise amplifiers; Noise figure; Silicon germanium; Low-noise amplifier; MMIC; SiGe BiCMOS; Wilson current source; narrowband filter;
Conference_Titel :
Information and Communication Technologies: From Theory to Applications, 2008. ICTTA 2008. 3rd International Conference on
Conference_Location :
Damascus, Syria
Print_ISBN :
978-1-4244-1751-3
Electronic_ISBN :
978-1-4244-1752-0
DOI :
10.1109/ICTTA.2008.4530262
