• DocumentCode
    1582093
  • Title

    A 1.2-V Single-Stage, SiGe BiCMOS Low-Noise Amplifier at 5.8GHz for Wireless Applications

  • Author

    Pourakbar, M. ; Langari, P. ; Dousti, M. ; Temcamani, F. ; Dracressoniere, B. ; Gautier, J.L.

  • fYear
    2008
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    This paper describes a low voltage low noise amplifier (LNA), designed using 0.35¿m SiGe BiCMOS process, targeting a center frequency of 5.8GHz with a voltage supply 1.2V. A power gain of 12.1dB at 5.8GHz has been achieved with a low power consumption of 3.8mW, including all biasing circuitry. The overall noise figure of the LNA is 3dB with both input and output impedance matched to 50¿.
  • Keywords
    BiCMOS integrated circuits; Circuit noise; Energy consumption; Frequency; Germanium silicon alloys; Impedance; Low voltage; Low-noise amplifiers; Noise figure; Silicon germanium; Low-noise amplifier; MMIC; SiGe BiCMOS; Wilson current source; narrowband filter;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Information and Communication Technologies: From Theory to Applications, 2008. ICTTA 2008. 3rd International Conference on
  • Conference_Location
    Damascus, Syria
  • Print_ISBN
    978-1-4244-1751-3
  • Electronic_ISBN
    978-1-4244-1752-0
  • Type

    conf

  • DOI
    10.1109/ICTTA.2008.4530262
  • Filename
    4530262
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1582093