Efficient Ternary Galois Field Circuit Design Through Carbon Nanotube Technology

Into an era of nanotechnology, molecular devices are becoming promising alternatives to the existing silicon technology. Carbon nanotube field effect transistors (CNFETs) are being extensively studied as possible successors to Silicon MOSFETs. Research has started in the earnest to understand the device physics of CNFETs as well as to explore possible circuit applications. Implementable CNTFET circuits have operational characteristics to approach the advantage of using MVL in voltage mode. In this paper through using of CNTFET characteristics, we present new CNTFET circuit design to implement Efficient ternary Galois Field.