DocumentCode :
1582346
Title :
The removal of phosphorus and boron by slag and acid leaching treatment
Author :
He, Falin ; Chen, Chao
Author_Institution :
College of Physics and Mechanics and Electrics, Xiamen University, 361005, China
fYear :
2012
Firstpage :
1
Lastpage :
4
Abstract :
The rapid development of photovoltaic industry is causing many researches on the refining of silicon, especially the purification of silicon by metallurgical method from the metallurgical-grade silicon (MG-Si). The removal of phosphorus and boron is one of the major problems on the refining of MG-Si to Solar-grade silicon (SoG-Si). At present, the removal method of phosphorous and boron by slagging of CaO-SiO2-CaF2 and acid leaching treatment is being researched. It was found that the best removal ratio of phosphorous and boron could reach up to 81% and 92%. Meanwhile, the principle of removal of phosphorous and boron has been studied.
Keywords :
acid leaching; boron; metallurgical-grade silicon; phosphorus; slagging;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
World Automation Congress (WAC), 2012
Conference_Location :
Puerto Vallarta, Mexico
ISSN :
2154-4824
Print_ISBN :
978-1-4673-4497-5
Type :
conf
Filename :
6321365
Link To Document :
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