DocumentCode
1582580
Title
Defect model and a unified approach to electrical properties in dielectric films
Author
Lin, Tsai-Ku ; Agarwal, V.K.
Author_Institution
Dept. of Phys., Kaohsiung Teachers´´ Coll., Taiwan
fYear
1989
Firstpage
272
Lastpage
276
Abstract
It is noted that although the electrical properties of dielectric thin films have been studied for some time, no systematic approach has emerged which fully explains their relationship to inherent defects in the films. The authors propose a unified approach to interpret the experimental data on these properties. First, they discuss general experimental observations on the structure, electrical conduction, and breakdown processes in thin films. This is followed by a stochastic model that explains these experimental observations. Finally, the authors describe the microscopic picture of conduction to breakdown in thin dielectric films
Keywords
defect electron energy states; dielectric thin films; electric breakdown of solids; electron traps; electronic conduction in insulating thin films; hole traps; hopping conduction; breakdown processes; carrier hopping; charge carrier trapping; defects; dielectric films; electrical conduction; stochastic model; structure; Conductive films; Conductivity; Dielectric films; Dielectric thin films; Electric breakdown; Equations; Fluctuations; Physics; Temperature; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Conduction and Breakdown in Solid Dielectrics, 1989., Proceedings of the 3rd International Conference on
Conference_Location
Trondheim
Type
conf
DOI
10.1109/ICSD.1989.69203
Filename
69203
Link To Document