• DocumentCode
    1582580
  • Title

    Defect model and a unified approach to electrical properties in dielectric films

  • Author

    Lin, Tsai-Ku ; Agarwal, V.K.

  • Author_Institution
    Dept. of Phys., Kaohsiung Teachers´´ Coll., Taiwan
  • fYear
    1989
  • Firstpage
    272
  • Lastpage
    276
  • Abstract
    It is noted that although the electrical properties of dielectric thin films have been studied for some time, no systematic approach has emerged which fully explains their relationship to inherent defects in the films. The authors propose a unified approach to interpret the experimental data on these properties. First, they discuss general experimental observations on the structure, electrical conduction, and breakdown processes in thin films. This is followed by a stochastic model that explains these experimental observations. Finally, the authors describe the microscopic picture of conduction to breakdown in thin dielectric films
  • Keywords
    defect electron energy states; dielectric thin films; electric breakdown of solids; electron traps; electronic conduction in insulating thin films; hole traps; hopping conduction; breakdown processes; carrier hopping; charge carrier trapping; defects; dielectric films; electrical conduction; stochastic model; structure; Conductive films; Conductivity; Dielectric films; Dielectric thin films; Electric breakdown; Equations; Fluctuations; Physics; Temperature; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Conduction and Breakdown in Solid Dielectrics, 1989., Proceedings of the 3rd International Conference on
  • Conference_Location
    Trondheim
  • Type

    conf

  • DOI
    10.1109/ICSD.1989.69203
  • Filename
    69203