Title :
Defect model and a unified approach to electrical properties in dielectric films
Author :
Lin, Tsai-Ku ; Agarwal, V.K.
Author_Institution :
Dept. of Phys., Kaohsiung Teachers´´ Coll., Taiwan
Abstract :
It is noted that although the electrical properties of dielectric thin films have been studied for some time, no systematic approach has emerged which fully explains their relationship to inherent defects in the films. The authors propose a unified approach to interpret the experimental data on these properties. First, they discuss general experimental observations on the structure, electrical conduction, and breakdown processes in thin films. This is followed by a stochastic model that explains these experimental observations. Finally, the authors describe the microscopic picture of conduction to breakdown in thin dielectric films
Keywords :
defect electron energy states; dielectric thin films; electric breakdown of solids; electron traps; electronic conduction in insulating thin films; hole traps; hopping conduction; breakdown processes; carrier hopping; charge carrier trapping; defects; dielectric films; electrical conduction; stochastic model; structure; Conductive films; Conductivity; Dielectric films; Dielectric thin films; Electric breakdown; Equations; Fluctuations; Physics; Temperature; Transistors;
Conference_Titel :
Conduction and Breakdown in Solid Dielectrics, 1989., Proceedings of the 3rd International Conference on
Conference_Location :
Trondheim
DOI :
10.1109/ICSD.1989.69203