Accurate measurements for lateral distribution of interface traps by charge pumping and capacitance methods

Author

Uchida, Hidetsugu ; Fukuda, Koichi ; Tanaka, Hiroyuki ; Hirashita, Norio

Author_Institution

VLSI R&D Center, Oki Electr. Ind. Co. Ltd., Tokyo, Japan

fYear

1995

Firstpage

41

Lastpage

44

Abstract

A new measurement method for lateral distribution of generated interface traps is proposed. This method consists of the charge pumping measurement and the gate-to-drain capacitance (C_gd) measurement. The validity of the C_gd measurement is confirmed by two-dimensional device simulation. Experimental results using this method exhibit that the peak position of interface traps generated during hot carrier stress is nearer to the gate edge than that of maximum electric field. Moreover, the lateral distribution of generated interface traps is found to extend slightly when the generation rate is enhanced due to water in interdielectric films of n-channel MOSFET

Keywords

MOSFET; capacitance; electron traps; hot carriers; semiconductor device models; MOSFETs; capacitance methods; charge pumping; gate edge; gate-to-drain capacitance; hot carrier stress; interdielectric films; interface traps; lateral distribution; two-dimensional device simulation; Capacitance measurement; Charge measurement; Charge pumps; Computational modeling; Current measurement; Degradation; Electron traps; Hot carriers; MOSFETs; Stress measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1995. IEDM '95., International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

0-7803-2700-4

Type

conf

DOI

10.1109/IEDM.1995.497178

Filename

497178