Title :
LDD charge pumping-direct measurement of interface states in the overlap region
Author :
Prabhakar, V. ; Brozek, T. ; Chan, Y.D. ; Viswanathan, C.R.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Abstract :
In submicron MOS devices, the degradation of the region where the gate overlaps the LDD (lightly doped drain) region determines hot carrier reliability as well as off-state leakage current. A quantitative experimental technique (LDD charge pumping) to characterize the interface states in the overlap region is demonstrated in this work. The usefulness of this technique is then demonstrated by application to the study of hot carrier and Fowler-Nordheim stresses as well as plasma exposure
Keywords :
MOSFET; hot carriers; interface states; leakage currents; semiconductor device reliability; Fowler-Nordheim stresses; LDD charge pumping; hot carrier reliability; interface states; lightly doped drain; off-state leakage current; overlap region; submicron MOS devices; Charge measurement; Charge pumps; Current measurement; Degradation; Hot carriers; Interface states; Leakage current; MOS devices; Plasma applications; Stress;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.497179
