• DocumentCode
    1583142
  • Title

    A comparative study of hot-carrier induced light emission and degradation in bulk and SOI MOSFETs

  • Author

    Selmi, Luca ; Pavesi, Maura ; Wong, Hon-Sum ; Acovic, Alexandre ; Sangiorgi, Enrico

  • Author_Institution
    Dipartimento di Elettronica, Inf. e Sistemistica, Bologna Univ., Italy
  • fYear
    1995
  • Firstpage
    49
  • Lastpage
    52
  • Abstract
    This paper presents a detailed study on hot-carrier induced luminescence and degradation of bulk and partially depleted SOI MOSFETs fabricated in the same wafer run, hence with directly comparable device parameters. In particular, we analyze the bias and energy (E) dependence of emission in virgin transistors, and its correlation with hot-carrier induced degradation
  • Keywords
    MOSFET; electroluminescence; hot carriers; semiconductor device reliability; silicon-on-insulator; SOI MOSFETs; directly comparable device parameters; hot-carrier induced degradation; hot-carrier induced light emission; luminescence; virgin transistors; wafer run; Current measurement; Degradation; Hot carrier effects; Hot carriers; Implants; Luminescence; MOSFETs; Monitoring; Physics; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1995. IEDM '95., International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-2700-4
  • Type

    conf

  • DOI
    10.1109/IEDM.1995.497180
  • Filename
    497180
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1583142