Title :
A comparative study of hot-carrier induced light emission and degradation in bulk and SOI MOSFETs
Author :
Selmi, Luca ; Pavesi, Maura ; Wong, Hon-Sum ; Acovic, Alexandre ; Sangiorgi, Enrico
Author_Institution :
Dipartimento di Elettronica, Inf. e Sistemistica, Bologna Univ., Italy
Abstract :
This paper presents a detailed study on hot-carrier induced luminescence and degradation of bulk and partially depleted SOI MOSFETs fabricated in the same wafer run, hence with directly comparable device parameters. In particular, we analyze the bias and energy (E) dependence of emission in virgin transistors, and its correlation with hot-carrier induced degradation
Keywords :
MOSFET; electroluminescence; hot carriers; semiconductor device reliability; silicon-on-insulator; SOI MOSFETs; directly comparable device parameters; hot-carrier induced degradation; hot-carrier induced light emission; luminescence; virgin transistors; wafer run; Current measurement; Degradation; Hot carrier effects; Hot carriers; Implants; Luminescence; MOSFETs; Monitoring; Physics; Silicon;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.497180
