BIGT control optimisation for overall loss reduction

Author

Papadopoulos, Christos ; Storasta, Liutauras ; Le Gallo, Manuel ; Rahimo, Munaf ; Schnell, R. ; Baschnagel, Andreas

Author_Institution

ABB Semicond., Lenzburg, Switzerland

fYear

2013

Firstpage

1

Lastpage

10

Abstract

In this paper we present the latest results of utilizing MOS-control (MOSctrl) to optimize the performance of the Bi-mode Insulated Gate Transistor (BIGT) chip. The adaption of the BIGT technology enables higher output power per footprint. However, to enable the full performance benefit of the BIGT, the optimisation of the known standard MOS gate control is necessary. This optimisation is being demonstrated over the whole current and temperature range for the BIGT diode turn-off and BIGT turn-on operation. It is shown that the optimum control can offer a performance increase up to 20% for high voltage devices.

Keywords

MOSFET; insulated gate bipolar transistors; BIGT control optimisation; MOS-control; bi-mode insulated gate transistor chip; full performance benefit; higher output power per footprint; overall loss reduction; Blanking; Insulated gate bipolar transistors; Logic gates; Optimization; Switches; Switching loss; Threshold voltage; BIGT; Device characterisation; Energy savings; MOS device; Optimal control; Semiconductor device;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications (EPE), 2013 15th European Conference on

Conference_Location

Lille

Type

conf

DOI

10.1109/EPE.2013.6634372

Filename

6634372