Title :
Reversal of temperature dependence of integrated circuits operating at very low voltages
Author :
Park, Changhae ; John, Jay P. ; Klein, Kevin ; Teplik, Jim ; Caravella, Jim ; Whitfield, Jim ; Papworth, Ken ; Cheng, Sunny
Author_Institution :
Adv. Custom Technol., Motorola Inc., Mesa, AZ, USA
Abstract :
This paper presents one of the first studies on the temperature dependence of integrated circuits operating at very low voltages. It was found that the performance degradation with temperature becomes smaller as the supply voltage decreases and actually reverses into enhancement below a “crossover” point in supply voltage. This reversal of temperature dependence is explained through analyses of some fundamental characteristics of MOSFET devices such as threshold voltage (VT) and carrier mobility
Keywords :
CMOS logic circuits; CMOS memory circuits; MOSFET; SRAM chips; carrier mobility; characteristics measurement; integrated circuit testing; -25 to 125 C; 1.2 to 3.3 V; CMOS process flow; MOSFET device characteristics; SRAM; carrier mobility; circuit testing; crossover point; integrated circuits; logic circuit; performance degradation; performance enhancement; temperature dependence; threshold voltage; very low voltages; Central Processing Unit; Circuit testing; Degradation; Energy consumption; Low voltage; MOS devices; MOSFET circuits; Random access memory; Temperature dependence; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.497185
