Reversal of temperature dependence of integrated circuits operating at very low voltages

Author

Park, Changhae ; John, Jay P. ; Klein, Kevin ; Teplik, Jim ; Caravella, Jim ; Whitfield, Jim ; Papworth, Ken ; Cheng, Sunny

Author_Institution

Adv. Custom Technol., Motorola Inc., Mesa, AZ, USA

fYear

1995

Firstpage

71

Lastpage

74

Abstract

This paper presents one of the first studies on the temperature dependence of integrated circuits operating at very low voltages. It was found that the performance degradation with temperature becomes smaller as the supply voltage decreases and actually reverses into enhancement below a “crossover” point in supply voltage. This reversal of temperature dependence is explained through analyses of some fundamental characteristics of MOSFET devices such as threshold voltage (V_T) and carrier mobility

Keywords

CMOS logic circuits; CMOS memory circuits; MOSFET; SRAM chips; carrier mobility; characteristics measurement; integrated circuit testing; -25 to 125 C; 1.2 to 3.3 V; CMOS process flow; MOSFET device characteristics; SRAM; carrier mobility; circuit testing; crossover point; integrated circuits; logic circuit; performance degradation; performance enhancement; temperature dependence; threshold voltage; very low voltages; Central Processing Unit; Circuit testing; Degradation; Energy consumption; Low voltage; MOS devices; MOSFET circuits; Random access memory; Temperature dependence; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1995. IEDM '95., International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

0-7803-2700-4

Type

conf

DOI

10.1109/IEDM.1995.497185

Filename

497185