DocumentCode
1583345
Title
The 3rd dimension-More Life for Moore´s Law
Author
Yu, C.H.
Author_Institution
Div. of Adv. Module Technol., Taiwan Semicond. Manuf. Co., Hsin-Chu
fYear
2006
Firstpage
1
Lastpage
6
Abstract
In accordance with continuing push for smaller and faster electronics, there is strong demand for further miniaturization and higher performance of mobile and other digital devices. Three-dimensional interconnect with through silicon via is one of the solution with best potential to extend Moore´s Law. 3D interconnect had the benefits of lower cost, higher performance, smaller form factor and heterogeneous integration for chips manufacturing. Thermal dissipation, process technology and circuit design are the top three issues for 3D IC success. For Si processing, the major challenges are the patterning and the fill of the through wafer via, wafer thinning, die/wafer bonding and its alignment. We need to carefully address those issues before we can proceed to mass production
Keywords
integrated circuit design; integrated circuit interconnections; integrated circuit manufacture; wafer bonding; 3D IC; 3D interconnect; Moore´s Law; chips manufacturing; circuit design; die-wafer bonding; heterogeneous integration; process technology; thermal dissipation; three-dimensional interconnect; wafer thinning; Electronics industry; Electrons; Integrated circuit interconnections; Manufacturing; Moore´s Law; Packaging; Semiconductor device manufacture; System-on-a-chip; Three-dimensional integrated circuits; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Microsystems, Packaging, Assembly Conference Taiwan, 2006. IMPACT 2006. International
Conference_Location
Taipei
Print_ISBN
1-4244-0734-6
Electronic_ISBN
1-4244-0735-4
Type
conf
DOI
10.1109/IMPACT.2006.312181
Filename
4107438
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