DocumentCode :
1583388
Title :
3D modeling of sputter and reflow processes for interconnect metals
Author :
Baumann, F.H. ; Gilmer, G.H.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
fYear :
1995
Firstpage :
89
Lastpage :
92
Abstract :
We report full 3D Monte Carlo (MC) and molecular dynamics (MD) simulations of aluminum sputtering and reflow. The topography evolution and surface diffusion during deposition are simulated with a mesoscopic hard-sphere MC model, where each sphere represents a cluster of material (/spl sim/100 /spl Aring/ in diameter). We have developed appropriate scaling laws, which allow the interaction between the spheres to be deduced from microscopic MD calculations. The results of the simulations reflect key experimental observations like absence of adhesion to the substrate after reflow, and the temperature dependence of via fill during high temperature sputter deposition.
Keywords :
Monte Carlo methods; adhesion; aluminium; integrated circuit interconnections; integrated circuit metallisation; molecular dynamics method; semiconductor process modelling; sputter deposition; surface diffusion; surface topography; 3D Monte Carlo simulation; 3D molecular dynamics simulation; Al; Al sputtering; high temperature sputter deposition; interconnect metals; mesoscopic hard-sphere MC model; microscopic MD calculations; reflow processes; scaling laws; substrate adhesion; surface diffusion; temperature dependence; topography evolution; via fill; Aluminum; Artificial intelligence; Atomic layer deposition; Microscopy; Monte Carlo methods; Nearest neighbor searches; Semiconductor device modeling; Sputtering; Surface topography; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC, USA
ISSN :
0163-1918
Print_ISBN :
0-7803-2700-4
Type :
conf
DOI :
10.1109/IEDM.1995.497189
Filename :
497189
Link To Document :
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