DocumentCode
1583388
Title
3D modeling of sputter and reflow processes for interconnect metals
Author
Baumann, F.H. ; Gilmer, G.H.
Author_Institution
AT&T Bell Labs., Holmdel, NJ, USA
fYear
1995
Firstpage
89
Lastpage
92
Abstract
We report full 3D Monte Carlo (MC) and molecular dynamics (MD) simulations of aluminum sputtering and reflow. The topography evolution and surface diffusion during deposition are simulated with a mesoscopic hard-sphere MC model, where each sphere represents a cluster of material (/spl sim/100 /spl Aring/ in diameter). We have developed appropriate scaling laws, which allow the interaction between the spheres to be deduced from microscopic MD calculations. The results of the simulations reflect key experimental observations like absence of adhesion to the substrate after reflow, and the temperature dependence of via fill during high temperature sputter deposition.
Keywords
Monte Carlo methods; adhesion; aluminium; integrated circuit interconnections; integrated circuit metallisation; molecular dynamics method; semiconductor process modelling; sputter deposition; surface diffusion; surface topography; 3D Monte Carlo simulation; 3D molecular dynamics simulation; Al; Al sputtering; high temperature sputter deposition; interconnect metals; mesoscopic hard-sphere MC model; microscopic MD calculations; reflow processes; scaling laws; substrate adhesion; surface diffusion; temperature dependence; topography evolution; via fill; Aluminum; Artificial intelligence; Atomic layer deposition; Microscopy; Monte Carlo methods; Nearest neighbor searches; Semiconductor device modeling; Sputtering; Surface topography; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-2700-4
Type
conf
DOI
10.1109/IEDM.1995.497189
Filename
497189
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