Title :
A large-signal model of RF LDMOS with skin effects of power combining structures
Author :
Han, Jeonghu ; Park, Changkun ; Baek, Donghyun ; Koh, Kyoungmin ; Ko, Juhyun ; Shon, Ilhun ; Hong, Songcheol
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., KAIST, Daejeon, South Korea
Abstract :
An empirical large signal model is presented to have good accuracy for all the device operating regions up to 20 GHz. Skin effects of combining structures, non-reciprocal capacitance, and non-quasi-static effect are considered in this model. A power transistor of 1.92 mm gate width is modeled and compared with measured data. P1dB of 20 dBm, 19 dB gain and 62 % PAE at P1dB in Pin-Pout properties are exactly predicted by the model.
Keywords :
CMOS integrated circuits; MMIC power amplifiers; capacitance; integrated circuit modelling; power MOSFET; power combiners; semiconductor device models; 1.92 mm; 19 dB; 20 GHz; 62 percent; CMOS; PAE; RF LDMOS large-signal model; device operating regions; gain; measured data; model accuracy; nonquasi-static effect; nonreciprocal capacitance; power MOSFET; power amplifiers; power combining structures; power transistor gate width; skin effects; CMOS process; Capacitance; MOSFET circuits; Power measurement; Power system modeling; Power transistors; Radio frequency; Semiconductor device modeling; Skin; Threshold voltage;
Conference_Titel :
Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE
Print_ISBN :
0-7803-8983-2
DOI :
10.1109/RFIC.2005.1489614
