A large-signal model of RF LDMOS with skin effects of power combining structures

Author

Han, Jeonghu ; Park, Changkun ; Baek, Donghyun ; Koh, Kyoungmin ; Ko, Juhyun ; Shon, Ilhun ; Hong, Songcheol

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., KAIST, Daejeon, South Korea

fYear

2005

Firstpage

149

Lastpage

152

Abstract

An empirical large signal model is presented to have good accuracy for all the device operating regions up to 20 GHz. Skin effects of combining structures, non-reciprocal capacitance, and non-quasi-static effect are considered in this model. A power transistor of 1.92 mm gate width is modeled and compared with measured data. P1dB of 20 dBm, 19 dB gain and 62 % PAE at P1dB in P_in-P_out properties are exactly predicted by the model.

Keywords

CMOS integrated circuits; MMIC power amplifiers; capacitance; integrated circuit modelling; power MOSFET; power combiners; semiconductor device models; 1.92 mm; 19 dB; 20 GHz; 62 percent; CMOS; PAE; RF LDMOS large-signal model; device operating regions; gain; measured data; model accuracy; nonquasi-static effect; nonreciprocal capacitance; power MOSFET; power amplifiers; power combining structures; power transistor gate width; skin effects; CMOS process; Capacitance; MOSFET circuits; Power measurement; Power system modeling; Power transistors; Radio frequency; Semiconductor device modeling; Skin; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-8983-2

Type

conf

DOI

10.1109/RFIC.2005.1489614

Filename

1489614