DocumentCode :
1583596
Title :
An ECR MOCVD (Ba,Sr)TiO3 based stacked capacitor technology with RuO2/Ru/TiN/TiSix storage nodes for Gbit-scale DRAMs
Author :
Yamamichi, S. ; Lesaicherre, P.-Y. ; Yamaguchi, H. ; Takemura, K. ; Sone, S. ; Yabuta, H. ; Sato, K. ; Tamura, T. ; Nakajima, K. ; Ohnishi, S. ; Tokashiki, K. ; Hayashi, Y. ; Kato, Y. ; Miyasaka, Y. ; Yoshida, M. ; Ono, H.
Author_Institution :
ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan
fYear :
1995
Firstpage :
119
Lastpage :
122
Abstract :
A high dielectric constant (Ba,Sr)TiO3 [BST] based stacked capacitor with new RuO2/Ru/TiN/TiSix storage nodes was developed for Gbit-scale DRAMs. Good insulating BST films with a small teq of 0.65 nm on the electrode sidewalls were obtained by ECR MOCVD. The four-layer storage node allows 500°C processing and fine-patterning down to 0.20 μm by EB lithography and RIE. A cell capacitance of 25 fF in 0.125 μm2 is achieved using 0.3 μm-high storage electrodes for 1 Gbit DRAMs
Keywords :
DRAM chips; barium compounds; capacitors; dielectric thin films; integrated circuit technology; plasma CVD coatings; strontium compounds; 0.20 micron; 1 Gbit; 25 fF; 500 C; BaSrTiO3; DRAM; EB lithography; ECR MOCVD; RIE; RuO2-Ru-TiN-TiSi; dielectric constant; four-layer storage node; insulating BST film; oxide equivalent thickness; stacked capacitor technology; Binary search trees; Capacitors; Electrodes; Etching; High-K gate dielectrics; MOCVD; Material storage; National electric code; Plasma applications; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
ISSN :
0163-1918
Print_ISBN :
0-7803-2700-4
Type :
conf
DOI :
10.1109/IEDM.1995.497196
Filename :
497196
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1583596
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