Effects of scaling thickness and niobium doping level on ferroelectric thin film capacitor memory operation

Author

Chai, Francis K. ; Schrimpf, R.D. ; Brews, J.R. ; Birnie, D.P., III ; Galloway, K.F. ; Vogt, R.N. ; Orr, M.N.

Author_Institution

Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA

fYear

1995

Firstpage

123

Lastpage

126

Abstract

Ferroelectric thin film capacitors (FTFCs) are the basic storage element in ferroelectric memory cells. In this paper, the effects of varying film thickness and niobium doping level on electrical properties for memory applications in FTFCs are examined. Reliability issues such as leakage current and fatigue are studied while the niobium doping level is varied. We find that reducing film thickness (in 0.3 μm range) by a factor of 2 should be accompanied by addition of niobium doping up to 5% in order to maintain reliable capacitor operation

Keywords

doping profiles; fatigue; ferroelectric capacitors; ferroelectric storage; ferroelectric thin films; lead compounds; leakage currents; niobium; piezoceramics; reliability; thin film capacitors; 3 micron; Nb doping level; PZT film thickness scaling; PZT:Nb; PbZrO3TiO3:Nb; electrical properties; fatigue; ferroelectric memory cells; ferroelectric thin film capacitor; leakage current; memory operation; reliability; storage element; Capacitors; Doping; Ferroelectric films; Ferroelectric materials; Hysteresis; Material storage; Niobium; Polarization; Semiconductor process modeling; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1995. IEDM '95., International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

0-7803-2700-4

Type

conf

DOI

10.1109/IEDM.1995.497197

Filename

497197