Title :
An mK×nK modular image sensor design
Author :
Kreider, G. ; Bosier, J. ; Dillen, B. ; van der Heijden, J. ; Hoekstra, W. ; Kleimann, A. ; Opmeer, P. ; Oppers, J. ; Peek, H. ; Pellens, R. ; Theuwissen, A.
Author_Institution :
Philips Imaging Technol., Eindhoven, Netherlands
Abstract :
A 1 K×2 K full frame sensor demonstrates a new modular sensor design. Each imager in the family is built from smaller, abutable blocks which are exposed in the correct position during lithography. These blocks can be stacked to form sensors of arbitrary size, all based on the same pixel structure. These pixels have a high charge handling capability, vertical anti-blooming, electronic shuttering, a high light sensitivity, and low dark current
Keywords :
CCD image sensors; dark conductivity; lithography; CCD image sensors; charge handling capability; dark current; electronic shuttering; full frame sensor; light sensitivity; lithography; modular image sensor design; pixel structure; stacked imagers; vertical anti-blooming; Buildings; Charge coupled devices; Clocks; Costs; Dark current; Filters; Image sensors; Lithography; Production; Resists;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.497203
