DocumentCode
1583767
Title
An mK×nK modular image sensor design
Author
Kreider, G. ; Bosier, J. ; Dillen, B. ; van der Heijden, J. ; Hoekstra, W. ; Kleimann, A. ; Opmeer, P. ; Oppers, J. ; Peek, H. ; Pellens, R. ; Theuwissen, A.
Author_Institution
Philips Imaging Technol., Eindhoven, Netherlands
fYear
1995
Firstpage
155
Lastpage
158
Abstract
A 1 K×2 K full frame sensor demonstrates a new modular sensor design. Each imager in the family is built from smaller, abutable blocks which are exposed in the correct position during lithography. These blocks can be stacked to form sensors of arbitrary size, all based on the same pixel structure. These pixels have a high charge handling capability, vertical anti-blooming, electronic shuttering, a high light sensitivity, and low dark current
Keywords
CCD image sensors; dark conductivity; lithography; CCD image sensors; charge handling capability; dark current; electronic shuttering; full frame sensor; light sensitivity; lithography; modular image sensor design; pixel structure; stacked imagers; vertical anti-blooming; Buildings; Charge coupled devices; Clocks; Costs; Dark current; Filters; Image sensors; Lithography; Production; Resists;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location
Washington, DC
ISSN
0163-1918
Print_ISBN
0-7803-2700-4
Type
conf
DOI
10.1109/IEDM.1995.497203
Filename
497203
Link To Document