A fingerprint opto-detector using lateral bipolar phototransistors in a standard CMOS process

Author

Sandage, Robert W. ; Connelly, J.Alvin

Author_Institution

Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

fYear

1995

Firstpage

171

Lastpage

174

Abstract

An integrated photodetector array has been fabricated using lateral bipolar phototransistors. These transistors are ten times as responsive (λ=660 nm) as identically sized vertical bipolar phototransistors and arrays of this transistor consume less power than charge-coupled device arrays of the same size. The image processing for this array is accomplished through the use of a current mode comparator

Keywords

CMOS digital integrated circuits; array signal processing; current comparators; fingerprint identification; image processing; image sensors; integrated optoelectronics; photodetectors; phototransistors; 660 nm; current mode comparator; fingerprint opto-detector; image processing; integrated photodetector array; lateral bipolar phototransistors; standard CMOS process; CMOS process; CMOS technology; Charge transfer; Fingerprint recognition; Optical arrays; Optical imaging; Photodetectors; Photodiodes; Phototransistors; Power engineering computing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1995. IEDM '95., International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

0-7803-2700-4

Type

conf

DOI

10.1109/IEDM.1995.497207

Filename

497207

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1583855