A solid-state imager joined to an avalanche multiplier film with micro-bump electrodes

Author

Yamazaki, Junichi ; Maruyama, Hirotaka ; Andoh, Fumihiko ; Tanioka, Kenkichi ; Araki, Shuichi ; Tsuji, Kazutaka ; Kawamura, Tatsuro

Author_Institution

NHK Sci. & Tech. Res. Labs., Tokyo, Japan

fYear

1995

Firstpage

175

Lastpage

178

Abstract

A highly sensitive solid-state imager has been made by connecting an avalanche multiplier film to a CMOS readout circuit via micro-bump electrodes. Optimization of the vapor-deposition conditions for the indium bump material made it possible for micro-bumps of 5 μm diameter and 4 μm height to be formed into a 2/3-inch matrix array of 380,000 pixels. A prototype imager was constructed with a 0.5-μm-thick avalanche photoconductive film. Clear avalanche multiplication of about ten times was observed at an applied voltage of 75 V. The imager had a good resolution and no recognizable after-images

Keywords

CMOS integrated circuits; avalanche breakdown; image sensors; photoconducting devices; 380000 pixel; 75 V; CMOS readout circuit; In; avalanche multiplication; matrix array; micro-bump electrodes; optimization; photoconductive film; solid-state imager; vapor deposition; CMOS image sensors; Electrodes; Image resolution; Indium; Joining processes; Photoconducting materials; Photoconductivity; Prototypes; Solid state circuits; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1995. IEDM '95., International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

0-7803-2700-4

Type

conf

DOI

10.1109/IEDM.1995.497208

Filename

497208