Title :
1.2 V operation 1.1 W heterojunction FET for portable radio applications
Author :
Inosako, Keiko ; Iwata, Naotaka ; Kuzuhara, Masaaki
Author_Institution :
Kansai Electron. Res. Lab., NEC Corp., Otsu, Japan
Abstract :
This paper describes 1.2 V operated power performance of a double-doped AlGaAs-InGaAs-AlGaAs heterojunction FET (HJFET) at 950 MHz. A 28 mm gate periphery HJFET delivered a saturated output power of 1.1 W for maximum output power tuning and a maximum power-added efficiency of 63% for maximum efficiency tuning. These results significantly advance the state-of-the-art of low voltage operation power devices for portable radio applications
Keywords :
III-V semiconductors; UHF field effect transistors; aluminium compounds; gallium arsenide; indium compounds; land mobile radio; power field effect transistors; 1.2 V; 63 percent; 950 MHz; AlGaAs-InGaAs-AlGaAs; LV operation power devices; double-doped HFET; heterojunction FET; low voltage operation; portable radio applications; Art; Breakdown voltage; FETs; Heterojunctions; Intrusion detection; Laboratories; Low voltage; National electric code; Power generation; Thermal resistance;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.497210
