Title :
0.1-μm p+-GaAs gate HJFETs with fT=121 GHz fabricated using all dry-etching and selective MOMBE growth
Author :
Wada, Shigeki ; Furuhata, Naoki ; Tokushima, Masatoshi ; Fukaishi, Muneo ; Hida, Hikaru ; Maeda, Tadashi
Author_Institution :
Microelectron. Res. Labs., NEC Corp., Tsukuba, Japan
Abstract :
This paper reports the first successful fabrication of a high-performance, 0.1-μm, T-shaped, p+-gate pseudomorphic heterojunction-FET (HJFET) using all dry-etching and selective MOMBE growth techniques. We have developed a two-step dry-etching technique that compensates for the poor dry-etching resistance of PMMA, and a voidless gate-electrode filling technique for high aspect-ratio openings with selective MOMBE p+-GaAs growth. Our efforts results in a reduction of external gate fringing capacitance and a improvement in gate turn-on voltage. The fabricated 0.1-μm, p+-gate n-Al 0.2Ga0.8As-In0.25Ga0.75As HJFET exhibits excellent microwave performance, fT=121 GHz and fmax=144 GHz
Keywords :
III-V semiconductors; aluminium compounds; chemical beam epitaxial growth; gallium arsenide; indium compounds; millimetre wave field effect transistors; semiconductor growth; sputter etching; 0.1 micron; 121 GHz; 144 GHz; Al0.2Ga0.8As-In0.25Ga0.75 As; EHF; GaAs; HJFET; T-shaped gate; dry-etching; fabrication; heterojunction FET; high aspect-ratio openings; microwave performance; p+-GaAs gate HJFETs; pseudomorphic HFET; selective MOMBE growth; voidless gate-electrode filling technique; Capacitance; Dry etching; Electrodes; FETs; Fabrication; Hydrogen; Microelectronics; Plasma applications; Reproducibility of results; Resists;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.497213
