Title :
A new physical model for the kink effect on InAlAs/InGaAs HEMTs
Author :
Somerville, Mark H. ; Del Alamo, JesÙs A. ; Hoke, William
Author_Institution :
MIT, Cambridge, MA, USA
Abstract :
New measurements providing direct evidence linking the kink effect and impact ionization in InAlAs/InGaAs HEMTs are reported. Current kink models are not consistent with our findings. We propose a new mechanism, barrier-induced hole pile-up at the source, to explain the kink. The new model is shown to be consistent with both room temperature and low temperature measurements. These results allow formulation of a simple equivalent circuit model of the kink
Keywords :
III-V semiconductors; aluminium compounds; equivalent circuits; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; semiconductor device models; HEMT; InAlAs-InGaAs; barrier-induced hole pile-up; equivalent circuit model; impact ionization; kink effect; physical model; source; Gold; HEMTs; Impact ionization; Indium compounds; Indium gallium arsenide; Joining processes; MODFETs; Ohmic contacts; Temperature; Voltage;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.497214
