DocumentCode
1584068
Title
A new physical model for the kink effect on InAlAs/InGaAs HEMTs
Author
Somerville, Mark H. ; Del Alamo, JesÙs A. ; Hoke, William
Author_Institution
MIT, Cambridge, MA, USA
fYear
1995
Firstpage
201
Lastpage
204
Abstract
New measurements providing direct evidence linking the kink effect and impact ionization in InAlAs/InGaAs HEMTs are reported. Current kink models are not consistent with our findings. We propose a new mechanism, barrier-induced hole pile-up at the source, to explain the kink. The new model is shown to be consistent with both room temperature and low temperature measurements. These results allow formulation of a simple equivalent circuit model of the kink
Keywords
III-V semiconductors; aluminium compounds; equivalent circuits; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; semiconductor device models; HEMT; InAlAs-InGaAs; barrier-induced hole pile-up; equivalent circuit model; impact ionization; kink effect; physical model; source; Gold; HEMTs; Impact ionization; Indium compounds; Indium gallium arsenide; Joining processes; MODFETs; Ohmic contacts; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location
Washington, DC
ISSN
0163-1918
Print_ISBN
0-7803-2700-4
Type
conf
DOI
10.1109/IEDM.1995.497214
Filename
497214
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