DocumentCode :
1584352
Title :
Fundamental study of an intelligent power routing switch based on SiC DC-DC converter for next generation DC distribution network
Author :
Hayashi, Yasuhiro ; Matsumoto, Akiyoshi
Author_Institution :
NTT Facilities, Inc., Tokyo, Japan
fYear :
2013
Firstpage :
1
Lastpage :
8
Abstract :
A power routing switch using SiC-MOSFET has been developed for the future DC distribution network. The routing switch behaves as an intelligent relay, a circuit breaker and an inrush avoiding circuit. The circuit configuration of the routing switch is based on the non-isolated hard-switching DC-DC converter, and the surge voltage across the SiC-MOSFET is minimized by managing circuit parasitic parameters to prevent malfunction of peripheral equipment. The high frequency digital control has been applied, and the fault current has been interrupted within several microseconds after the accident. A 5 kW and DC 380 V prototype has been fabricated and the performance as the circuit breaker and the inrush avoiding circuit has been evaluated experimentally. The fault current of 37 A has been interrupted within 5 μs after the detection of the fault current of 22 A, suppressing the overshoot voltage of the SiC-MOSFET lower than 500 V. The inrush current has been also avoided by the PWM soft-start operation for the capacitive load without any external protection equipment. The developed switch works as the multifunction circuit protection device and realizes the flexible intelligent power routing by taking the control strategy for the next generation DC network into account.
Keywords :
DC-DC power convertors; circuit breakers; fault currents; power MOSFET; power distribution protection; silicon compounds; switching convertors; wide band gap semiconductors; PWM soft-start operation; SiC; capacitive load; circuit breaker; circuit parasitic parameters; current 22 A; current 37 A; fault current; flexible intelligent power routing; high-frequency digital control; inrush avoiding circuit; intelligent power routing switch; intelligent relay; multifunction circuit protection device; next generation DC distribution network; nonisolated hard-switching DC-DC converter; overshoot voltage; peripheral equipment; power 5 kW; silicon carbide DC-DC converter; silicon carbide MOSFET; surge voltage; time 5 mus; voltage 380 V; Routing; Silicon carbide; Surge protection; Surges; Switches; Switching circuits; DC Grid; Device Application; Protection Device; Silicon Carbide (SiC);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics and Applications (EPE), 2013 15th European Conference on
Conference_Location :
Lille
Type :
conf
DOI :
10.1109/EPE.2013.6634422
Filename :
6634422
Link To Document :
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