Title :
A 16 A IGBT-gate drive ASIC in a 18 V, 3 μm BiCMOS technology
Author :
Kuratli, Christoph ; Biber, Alice ; Qiuting Huang
Author_Institution :
Integrated Syst. Lab., Swiss Federal Inst. of Technol., Zurich, Switzerland
Abstract :
An integrated gate-drive (IGD) ASIC has been implemented in a 18 V, 3 μm BiCMOS technology for IGBT based intelligent power modules (IPM). It consists of a mixed analog digital controller and a powerful output stage to drive the gate of the IGBT. The controller features various functions such as master/slave operation, dV/dT control and short circuit protection. The BiCMOS type driver is capable of delivering up to 16 A peak current to a capacitive load
Keywords :
BiCMOS integrated circuits; driver circuits; insulated gate bipolar transistors; mixed analogue-digital integrated circuits; power bipolar transistors; power integrated circuits; 16 A; 18 V; 3 mum; BiCMOS technology; IGBT intelligent power module; capacitive load; dV/dT control; integrated gate-drive ASIC; master/slave operation; mixed analog digital controller; output stage; peak current; short circuit protection; Application specific integrated circuits; BiCMOS integrated circuits; Current supplies; Driver circuits; Insulated gate bipolar transistors; MOSFET circuits; Multichip modules; Power MOSFET; Silicon; Very large scale integration;
Conference_Titel :
Industrial Electronics, 1995. ISIE '95., Proceedings of the IEEE International Symposium on
Conference_Location :
Athens
Print_ISBN :
0-7803-7369-3
DOI :
10.1109/ISIE.1995.497234
