• DocumentCode
    1584815
  • Title

    Analysis of the plastic deformation in aluminium metallizations of Al2O3-based DAB substrates

  • Author

    Poller, Tilo ; Lutz, Josef ; Bottge, Bianca ; Knoll, Heiko

  • Author_Institution
    Dept. of Power Electron. & EMC, Chemnitz Univ. of Technol., Chemnitz, Germany
  • fYear
    2013
  • Firstpage
    1
  • Lastpage
    10
  • Abstract
    DAB are a new kind of substrates in which the copper layer was replaced by an aluminum layer. In [1] a increase of the roughness of these aluminum layer was observed during thermal cycling tests. A similar effect was observed during power cycling tests in [2, 3]. This paper will discuss this effect with experimental results and Finite Element (FEM) simulations.
  • Keywords
    aluminium compounds; finite element analysis; insulated gate bipolar transistors; plastic deformation; power bipolar transistors; semiconductor device metallisation; Al2O3; FEM simulation; IGBT; aluminium metallizations; aluminium oxide-based DAB substrates; aluminum layer roughness; finite element simulation; plastic deformation analysis; power cycling tests; thermal cycling tests; Aluminum; Insulated gate bipolar transistors; Metallization; Multichip modules; Plastics; Substrates; Temperature measurement; Aerospace; Packaging; Reliability; Thermal design; Thermal stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics and Applications (EPE), 2013 15th European Conference on
  • Conference_Location
    Lille
  • Type

    conf

  • DOI
    10.1109/EPE.2013.6634442
  • Filename
    6634442
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1584815