Title :
Resonant beam pressure sensor fabricated with silicon fusion bonding
Author :
Petersen, K. ; Pourahmadi, F. ; Brown, J. ; Parsons, P. ; Skinner, M. ; Tudor, J.
Abstract :
A resonant pressure sensor has been fabricated which consists of a single-crystal silicon beam located in the center of a single-crystal silicon diaphragm. The beam is excited electrostatically and its motion are detected by piezoresistors. The structure is fabricated with silicon fusion bonding. Overall measurement accuracies of 0.01% have been achieved. This sensor has been designed to meet the exacting standards required for aerospace air data computers and engine control applications where achievable accuracies of 0.1% absolute pressure are required. The principle of operation is imply to measure the change in resonant frequency of a micromachined silicon beam as the pressure exerted on the sensor´s diaphragm is changed.<>
Keywords :
electric sensing devices; elemental semiconductors; integrated circuit technology; micromechanical devices; piezoelectric devices; pressure measurement; pressure transducers; silicon; IC; Si beam; aerospace air data computers; engine control; etching; finite element modelling; fusion bonding; micromachined silicon beam; piezoresistors; resonant frequency; resonant pressure sensor; single crystal Si diaphragm; stability; standards; temperature hysteresis; Aerospace control; Bonding; Electrostatic measurements; Engines; Motion detection; Piezoresistive devices; Pressure control; Resonance; Sensor fusion; Silicon;
Conference_Titel :
Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-87942-585-7
DOI :
10.1109/SENSOR.1991.148968
