DocumentCode :
1585130
Title :
Probabilistic CMOS Technology: A Survey and Future Directions
Author :
Akgul, Bilge E S ; Chakrapani, Lakshmi N. ; Korkmaz, Pinar ; Palem, Krishna V.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
fYear :
2006
Firstpage :
1
Lastpage :
6
Abstract :
Highly scaled CMOS devices in the nanoscale regime would inevitably exhibit statistical or probabilistic behavior. Such behavior is due to process variations and other perturbations such as noise. Therefore current circuit design methodologies, which depend on the existence of deterministic and uniform devices with no consideration for either power consumption or probabilistic behavior, would no longer be sufficient to design robust circuits. To help overcome this challenge, CMOS devices have been characterized with probabilistic behavior (probabilistic CMOS or PCMOS devices) at several levels: from foundational principles to analytical modeling, simulation, fabrication and measurement, as well as innovative approaches to harnessing PCMOS devices in system-on-a-chip architectures which can implement a wide range of applications. This paper presents a broad overview of our contributions in the domain of PCMOS, and outline ongoing work and future challenges in this area
Keywords :
CMOS integrated circuits; integrated circuit modelling; nanoelectronics; statistical analysis; system-on-chip; CMOS devices; PCMOS devices; nanoscale regime; probabilistic CMOS technology; probabilistic behavior; process variations; robust circuits design; statistical behavior; Analytical models; CMOS technology; Circuit noise; Circuit simulation; Circuit synthesis; Energy consumption; Nanoscale devices; Noise robustness; Power system modeling; Semiconductor device modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Very Large Scale Integration, 2006 IFIP International Conference on
Conference_Location :
Nice
Print_ISBN :
3-901882-19-7
Type :
conf
DOI :
10.1109/VLSISOC.2006.313282
Filename :
4107595
Link To Document :
بازگشت