Investigation of microwave annealed implanted layers with TWIN metrology system

The study of the effects of microwave annealing of ion-implanted layers in silicon substrate evaluated by photo-thermal technique is reported. The technique allows nondestructive and fast characterization of the annihilation processes of damage layer defects as a function of microwave annealing conditions. The preliminary data are suggesting that the microwave field is affecting damaged and heavily doped regions, the remaining undamaged region of the semiconductor wafer is essentially transparent to the electromagnetic waves in the GHz wave range.