Title :
Limitation of DC-side stray inductance by considering over voltage and short-circuit current
Author :
Wada, Kazuyoshi ; Ando, Makoto
Author_Institution :
Dept. of Electr. Eng., Tokyo Metropolitan Univ., Hachioji, Japan
Abstract :
This paper presents a design procedure of the DC-side stray inductance for high-speed switching circuit using SiC power devices considering an over voltage and a short-circuit current. In order to verify the analysis results of the over voltage and the short-circuit current, the experiments are conducted. Moreover, the design procedure of the DC-side wiring structure considering the stray inductance is discussed with using an inductance map.
Keywords :
elemental semiconductors; inductance; overvoltage; power convertors; short-circuit currents; silicon; switching circuits; DC-side stray inductance limitation; DC-side wiring structure; SiC; high-speed switching circuit; inductance map; over voltage; short-circuit current; Inductance; Logic gates; MOSFET; Resistance; Short-circuit currents; Switches; Voltage control; Bus Bar; Design; Reliability; Silicon carbide (SiC);
Conference_Titel :
Power Electronics and Applications (EPE), 2013 15th European Conference on
Conference_Location :
Lille
DOI :
10.1109/EPE.2013.6634460
