Novel copper metallization on silicon carbide electronic devices enabling increased packaging lifetime and higher junction-temperatures

While aluminum-based metallization schemes on Si and corresponding top-side connections via Al-bonds have been optimized for the last decades and are well understood today, only few investigations have been done on the interaction of thick Cu wire-bonds and copper-metallizations on SiC. In this work the mechanical as well as the electrical interactions of copper-metallization schemes have specially been analyzed and optimized for SiC-devices in high reliability applications. By utilizing temperature storage as well as active and passive temperature cycles at temperatures above 200°C it has been proven, that this metallization together with corresponding Cu-bond connections can enable higher junction-temperatures for SiC power electronic devices.