High temperature growth of SiC and group III nitride structures in production reactors

We describe the use of a family of high temperature reactors to grow SiC and nitrides. The load capacity ranges from single wafer machines to multiple wafer mass production reactors. All these reactors have a two flow injection system allowing a separated inlet of the various reactants. To achieve maximum uniformity of the growth, the gas foil rotation principle is applied. The multiwafer reactors are planetary reactors with a double rotation of substrates. Extensive modeling has been used in order to find the optimum reactor geometries. Thus an optimization of uniformity and efficiency and a minimization of undesired parasitic reactions has been obtained