DocumentCode
1585858
Title
A simple state-based prognostic model for predicting remaining useful life of IGBT power module
Author
Alghassi, Alireza ; Perinpanayagam, Suresh ; Jennions, I.K.
Author_Institution
IVHM Center, Cranfield Univ., Milton Keynes, UK
fYear
2013
Firstpage
1
Lastpage
7
Abstract
Health management and reliability are fundamental aspects of the design and development cycle of power electronic products. This paper presents the prognostic evaluation of a power electronic IGBT module. To achieve this aim, a simple state-based prognostic (SSBP) method has been introduced and applied on the data which was extracted from an aged power electronic IGBT and its remaining useful life was determined.
Keywords
insulated gate bipolar transistors; reliability; remaining life assessment; SSBP method; power electronic IGBT module; prognostic evaluation; remaining useful life prediction; simple state-based prognostic method; state-based prognostic model; Hidden Markov models; Insulated gate bipolar transistors; Mathematical model; Prognostics and health management; Reliability; Temperature measurement; IGBT; Prognosis; Reliability; SSBP;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Applications (EPE), 2013 15th European Conference on
Conference_Location
Lille
Type
conf
DOI
10.1109/EPE.2013.6634482
Filename
6634482
Link To Document