SiC BGJFET inverter for high temperature/power applications

Author

Rozario, Lisa V. ; Sadwick, Laurence P. ; Hwu, R. Jennifer ; King, Donald B.

Author_Institution

Dept. of Electr. Eng., Utah Univ., Salt Lake City, UT, USA

fYear

1998

Firstpage

29

Lastpage

33

Abstract

SiC buried gate JFET (BGJFET) inverters were designed, implemented, and tested for high-temperature and high-power applications. The main purpose of this study was to investigate the thermal stability of the SiC BGJFETs in a circuit operation as well as to observe the effects of temperature on the circuit performance. The work is subdivided into two major sections: modeling of SiC BGJFETs and simulation of various inverter configurations; and experimental results and observations

Keywords

JFET integrated circuits; SPICE; circuit optimisation; circuit simulation; high-temperature electronics; integrated circuit design; junction gate field effect transistors; logic gates; power field effect transistors; semiconductor device models; silicon compounds; thermal stability; wide band gap semiconductors; 10 kHz; 100 kHz; 25 C; 300 C; HSPICE; SiC; SiC BGJFET modeling; SiC buried gate JFET inverters; circuit operation; circuit optimization; circuit performance; high-power applications; high-temperature applications; inverter configuration simulation; temperature effects; thermal stability; Frequency; Integrated circuit modeling; JFETs; MESFETs; Parameter extraction; Pulse inverters; SPICE; Silicon carbide; Temperature; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International

Conference_Location

Albuquerque, NM

Print_ISBN

0-7803-4540-1

Type

conf

DOI

10.1109/HITEC.1998.676756

Filename

676756