Analog CMOS integrated circuits for high-temperature operation with leakage current compensation

Author

Mizuno, Kentaro ; Ohta, Norikazu ; Kitagawa, Fumitaka ; Nagase, Hiroshi

Author_Institution

Toyota Central Res. & Dev. Labs. Inc., Aichi, Japan

fYear

1998

Firstpage

41

Lastpage

44

Abstract

To facilitate high-temperature operation of CMOS analog integrated circuits, we proposed new compensation circuits which compensated for PN-junction leakage current more precisely than conventional compensation circuits. As the result of applying these circuits to a voltage reference circuit, the operating temperature region was extended 20-40°C

Keywords

CMOS analogue integrated circuits; compensation; high-temperature electronics; integrated circuit design; leakage currents; reference circuits; 20 to 40 C; PN-junction leakage current; analog CMOS integrated circuits; high-temperature operation; leakage current compensation; operating temperature region; voltage reference circuit; Analog integrated circuits; CMOS analog integrated circuits; CMOS integrated circuits; Diodes; Leakage current; MOSFET circuits; Research and development; Temperature dependence; Temperature distribution; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International

Conference_Location

Albuquerque, NM

Print_ISBN

0-7803-4540-1

Type

conf

DOI

10.1109/HITEC.1998.676758

Filename

676758