• DocumentCode
    1586025
  • Title

    SOI current and voltage reference sources for applications up to 300°C

  • Author

    Eggermont, J.-P. ; Dessard, V. ; Vandooren, A. ; Flandre, D. ; Colinge, J.P.

  • Author_Institution
    Alcatel Microelectron., Oudenaarde, Belgium
  • fYear
    1998
  • Firstpage
    55
  • Lastpage
    59
  • Abstract
    This work presents the potential of fully-depleted SOI technology to implement current and voltage reference sources for very wide temperature range applications. Design of these reference sources is realized using device measurements. Implementation results show temperature coefficient better than 100 ppm from room temperature to 300°C
  • Keywords
    MOS analogue integrated circuits; constant current sources; high-temperature electronics; reference circuits; silicon-on-insulator; 300 C; current reference source; fully depleted SOI technology; temperature coefficient; voltage reference source; CMOS technology; Laboratories; MOSFET circuits; Microelectronics; Resistors; Semiconductor films; Silicon; Temperature distribution; Temperature sensors; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International
  • Conference_Location
    Albuquerque, NM
  • Print_ISBN
    0-7803-4540-1
  • Type

    conf

  • DOI
    10.1109/HITEC.1998.676761
  • Filename
    676761
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1586025